POWER SEMICONDUCTOR-DEVICES FOR VARIABLE-FREQUENCY DRIVES

被引：61

作者：

BALIGA, J

机构：

[1] Power Semiconductor Research Center, North Carolina State University, Raleigh

来源：

PROCEEDINGS OF THE IEEE | 1994年 / 82卷 / 08期

关键词：

D O I：

10.1109/5.301680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advances in power semiconductor technology are the driving force for enhancement of the performance of variable-frequency motor drives. The development of power semiconductor devices with MOS-gate structures has enabled the control of large amounts of energy with very little input power. An equally important advancement has taken place in the development of improved rectifiers with reduced losses for high-frequency operation. In addition, the advent of MOS-gated power switches has led to the creation of smart power technology which makes compact systems with built-in diagnostic and protection functions commercially feasible. Although the power semiconductor chips are all made from silicon today, recent analysis has indicated that devices fabricated from silicon carbide have the potential for completely displacing silicon devices in the long range.

引用

页码：1112 / 1122

页数：11

共 28 条

[1] POWER SEMICONDUCTOR SWITCHING DEVICES - A COMPARISON BASED ON INDUCTIVE SWITCHING [J].