SWITCHING SPEED ENHANCEMENT IN INSULATED GATE TRANSISTORS BY ELECTRON-IRRADIATION

被引：34

作者：

BALIGA, BJ ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,TROY,NY 12181

来源：

关键词：

D O I：

10.1109/T-ED.1984.21790

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1790 / 1795

页数：6

共 10 条

[1] Baliga B. J., 1982, International Electron Devices Meeting. Technical Digest, P264
[2] COMPARISON OF GOLD, PLATINUM, AND ELECTRON-IRRADIATION FOR CONTROLLING LIFETIME IN POWER RECTIFIERS
BALIGA, BJ
SUN, E
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 685 - 688
[3] ELECTRON-IRRADIATION OF FIELD-CONTROLLED THYRISTORS
BALIGA, BJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (05) : 805 - 811
[4] BALIGA BJ, 1983, SOLID STATE ELECTRON, V26, P1133, DOI 10.1016/0038-1101(83)90140-5
[5] LIFETIME CONTROL IN SILICON POWER DEVICES BY ELECTRON OR GAMMA-IRRADIATION
CARLSON, RO
SUN, YS
ASSALIT, HB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) : 1103 - 1108
[6] Chang M. F., 1983, International Electron Devices Meeting 1983. Technical Digest, P83
[7] CHOO SC, 1970, IEEE T ELECTRON DEV, VED17, P647, DOI 10.1109/T-ED.1970.17051
[8] Goodman A. M., 1983, International Electron Devices Meeting 1983. Technical Digest, P79
[9] THE COMFET - A NEW HIGH CONDUCTANCE MOS-GATED DEVICE
RUSSELL, JP
GOODMAN, AM
GOODMAN, LA
NEILSON, JM
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) : 63 - 65
[10] TARNEJA KS, 1975, ELECTROCHEM SOC M