ELECTRON-IRRADIATION OF FIELD-CONTROLLED THYRISTORS

[1] Baliga B. J., 1980, International Electron Devices Meeting. Technical Digest, P654

[2] COMPARISON OF GOLD, PLATINUM, AND ELECTRON-IRRADIATION FOR CONTROLLING LIFETIME IN POWER RECTIFIERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 685 - 688

[3] BALIGA BJ, 1977, SOLID STATE ELECTRON, V20, P225, DOI 10.1016/0038-1101(77)90188-5

[4] BURIED-GRID FIELD-CONTROLLED THYRISTORS FABRICATED USING SILICON LIQUID-PHASE EPITAXY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2141 - 2145

[5] GRID DEPTH DEPENDENCE OF THE CHARACTERISTICS OF VERTICAL CHANNEL FIELD CONTROLLED THYRISTORS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (03) : 237 - 239

[6] THE ASYMMETRICAL FIELD-CONTROLLED THYRISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (07) : 1262 - 1268

[7] BALIGA BJ, 1981, SILICON POWER FIELD

[8] POWER BIPOLAR GRIDISTOR [J]. ELECTRONICS LETTERS, 1976, 12 (19) : 486 - 487

[9] LIFETIME CONTROL IN SILICON POWER DEVICES BY ELECTRON OR GAMMA-IRRADIATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) : 1103 - 1108

[10] CHOO SC, 1970, IEEE T ELECTRON DEV, VED17, P647, DOI 10.1109/T-ED.1970.17051

[1] Baliga B. J., 1980, International Electron Devices Meeting. Technical Digest, P654

[2] COMPARISON OF GOLD, PLATINUM, AND ELECTRON-IRRADIATION FOR CONTROLLING LIFETIME IN POWER RECTIFIERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 685 - 688

[3] BALIGA BJ, 1977, SOLID STATE ELECTRON, V20, P225, DOI 10.1016/0038-1101(77)90188-5

[4] BURIED-GRID FIELD-CONTROLLED THYRISTORS FABRICATED USING SILICON LIQUID-PHASE EPITAXY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2141 - 2145

[5] GRID DEPTH DEPENDENCE OF THE CHARACTERISTICS OF VERTICAL CHANNEL FIELD CONTROLLED THYRISTORS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (03) : 237 - 239

[6] THE ASYMMETRICAL FIELD-CONTROLLED THYRISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (07) : 1262 - 1268

[7] BALIGA BJ, 1981, SILICON POWER FIELD

[8] POWER BIPOLAR GRIDISTOR [J]. ELECTRONICS LETTERS, 1976, 12 (19) : 486 - 487

[9] LIFETIME CONTROL IN SILICON POWER DEVICES BY ELECTRON OR GAMMA-IRRADIATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) : 1103 - 1108

[10] CHOO SC, 1970, IEEE T ELECTRON DEV, VED17, P647, DOI 10.1109/T-ED.1970.17051