GRID DEPTH DEPENDENCE OF THE CHARACTERISTICS OF VERTICAL CHANNEL FIELD CONTROLLED THYRISTORS

被引：12

作者：

BALIGA, BJ

机构：

[1] General Electric Company, Corporate Research, Development Center, Schenectady

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 03期

关键词：

D O I：

10.1016/0038-1101(79)90027-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of changing grid depth upon the characteristics of vertical channel field controlled thyristors has been experimentally studied. It is found that increasing the grid depth results in an exponential increase in the differential blocking gain, and a significant decrease in the turn-off time, with no detrimental effect upon the forward conduction characteristics. © 1979.

引用

页码：237 / 239

页数：3

共 7 条

[1] FACTORS DETERMINING FORWARD VOLTAGE DROP IN FIELD-TERMINATED DIODE (FTD) [J].