FIELD TERMINATED DIODE

被引：23

作者：

HOUSTON, DE

KRISHNA, S

PICCONE, DE

FINKE, RJ

SUN, YS

机构：

[1] GE,SEMICONDUCTOR PROD DEPT,AUBURN,NJ

[2] GE,CTR RES & DEV,SCHENECTADY,NY 12301

[3] GE,STATIC POWER COMPONENT OPERATION,COLLINGDALE,PA 19023

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 08期

关键词：

D O I：

10.1109/T-ED.1976.18507

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：905 / 911

页数：7

共 19 条

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[9] ION-IMPLANTED FET FOR POWER APPLICATIONS [J].

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[10]

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