OPTIMUM DESIGN OF TRIODE-LIKE JFETS BY 2 DIMENSIONAL COMPUTER-SIMULATION

被引：43

作者：

YAMAGUCHI, K ^{[1
]}

KODERA, H ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 08期

关键词：

D O I：

10.1109/T-ED.1977.18877

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1061 / 1069

页数：9

共 16 条

[1] THEORY OF INSULATED-GATE FIELD-EFFECT TRANSISTORS NEAR AND BEYOND PINCH-OFF [J].

GEURST, JA .

SOLID-STATE ELECTRONICS, 1966, 9 (02) :129-+

[2] ION-IMPLANTED FET FOR POWER APPLICATIONS [J].

LECROSNIER, DP ;

PELOUS, GP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) :113-118

[3]

NEWMARK GF, 1967, SOLID STATE ELECTRON, V10, P299

[4] DOUBLE-DRIFT IMPATT DIODES NEAR 100-GHZ [J].

NIEHAUS, WC ;

SEIDEL, TE ;

IGLESIAS, DE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) :765-771

[5]

NISHIZAWA J, Patent No. 4657768

[6] FIELD-EFFECT TRANSISTOR VERSUS ANALOG TRANSISTOR (STATIC INDUCTION TRANSISTOR) [J].

NISHIZAWA, JI ;

TERASAKI, T ;

SHIBATA, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) :185-197

[7] MULTI-CHANNEL FET WITH A NEW DIFFUSION TYPE STRUCTURE [J].

OZAWA, O ;

AOKI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 :171-177

[8] TRANSISTOR ELECTRONICS - IMPERFECTIONS, UNIPOLAR AND ANALOG TRANSISTORS [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1289-1313

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[10] FIELD-DEPENDENT MOBILITY ANALYSIS OF FIELD-EFFECT TRANSISTOR [J].

TROFIMENKOFF, FN .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (11) :1765-+

← 1 2 →