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MULTI-CHANNEL FET WITH A NEW DIFFUSION TYPE STRUCTURE
被引:10
作者
:
OZAWA, O
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN
TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN
OZAWA, O
[
1
]
AOKI, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN
TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN
AOKI, K
[
1
]
机构
:
[1]
TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1976年
/ 15卷
关键词
:
D O I
:
10.7567/JJAPS.15S1.171
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:171 / 177
页数:7
相关论文
共 13 条
[1]
SILICON CURRENT AMPLIFIER FOR MICROAMPERE CURRENT LEVELS
[J].
BUCHANAN, B
论文数:
0
引用数:
0
h-index:
0
BUCHANAN, B
;
ROOSILD, S
论文数:
0
引用数:
0
h-index:
0
ROOSILD, S
;
DOLAN, R
论文数:
0
引用数:
0
h-index:
0
DOLAN, R
.
PROCEEDINGS OF THE IEEE,
1964,
52
(11)
:1364
-&
[2]
PURE SPACE-CHARGE-LIMITED ELECTRON CURRENT IN SILICON
[J].
DENDA, S
论文数:
0
引用数:
0
h-index:
0
DENDA, S
;
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(06)
:2412
-&
[3]
DULAND P, 1972, ELECTRONICS LETT, V8, P306
[4]
THEORY OF INSULATED-GATE FIELD-EFFECT TRANSISTORS NEAR AND BEYOND PINCH-OFF
[J].
GEURST, JA
论文数:
0
引用数:
0
h-index:
0
GEURST, JA
.
SOLID-STATE ELECTRONICS,
1966,
9
(02)
:129
-+
[5]
AVALANCHE BREAKDOWN CALCULATIONS FOR A PLANAR P-N JUNCTION
[J].
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
KENNEDY, DP
;
OBRIEN, RR
论文数:
0
引用数:
0
h-index:
0
OBRIEN, RR
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1966,
10
(03)
:213
-&
[6]
ION-IMPLANTED FET FOR POWER APPLICATIONS
[J].
LECROSNIER, DP
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN, LANNION, FRANCE
CTR NATL ETUD TELECOMMUN, LANNION, FRANCE
LECROSNIER, DP
;
PELOUS, GP
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN, LANNION, FRANCE
CTR NATL ETUD TELECOMMUN, LANNION, FRANCE
PELOUS, GP
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1974,
ED21
(01)
:113
-118
[7]
DEPLETION LAYER CAPACITANCE OF CYLINDRICAL AND SPHERICAL P-N JUNCTIONS
[J].
LEE, TP
论文数:
0
引用数:
0
h-index:
0
LEE, TP
;
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
.
SOLID-STATE ELECTRONICS,
1967,
10
(11)
:1105
-&
[8]
VDS VOLTAGE CAPABILITIES OF A DIFFUSED JFET WITH A VERTICAL-CHANNEL ARRANGEMENT
[J].
MORENZA, JL
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,LAB AUTOM & ANAL SYST,7 AVE COLONEL ROCHE,31400 TOULOUSE,FRANCE
CNRS,LAB AUTOM & ANAL SYST,7 AVE COLONEL ROCHE,31400 TOULOUSE,FRANCE
MORENZA, JL
;
ESTEVE, D
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,LAB AUTOM & ANAL SYST,7 AVE COLONEL ROCHE,31400 TOULOUSE,FRANCE
CNRS,LAB AUTOM & ANAL SYST,7 AVE COLONEL ROCHE,31400 TOULOUSE,FRANCE
ESTEVE, D
.
ELECTRONICS LETTERS,
1975,
11
(08)
:172
-174
[9]
TRANSITION FROM PENTODE- TO TRIODE-LIKE CHARACTERISTICS IN FIELD EFFECT TRANSISTORS
[J].
NEUMARK, GF
论文数:
0
引用数:
0
h-index:
0
NEUMARK, GF
;
RITTNER, ES
论文数:
0
引用数:
0
h-index:
0
RITTNER, ES
.
SOLID-STATE ELECTRONICS,
1967,
10
(04)
:299
-&
[10]
THEORY OF SURFACE GATE DIELECTRIC TRIODE
[J].
RITTNER, ES
论文数:
0
引用数:
0
h-index:
0
RITTNER, ES
;
NEUMARK, GF
论文数:
0
引用数:
0
h-index:
0
NEUMARK, GF
.
SOLID-STATE ELECTRONICS,
1966,
9
(09)
:885
-&
←
1
2
→
共 13 条
[1]
SILICON CURRENT AMPLIFIER FOR MICROAMPERE CURRENT LEVELS
[J].
BUCHANAN, B
论文数:
0
引用数:
0
h-index:
0
BUCHANAN, B
;
ROOSILD, S
论文数:
0
引用数:
0
h-index:
0
ROOSILD, S
;
DOLAN, R
论文数:
0
引用数:
0
h-index:
0
DOLAN, R
.
PROCEEDINGS OF THE IEEE,
1964,
52
(11)
:1364
-&
[2]
PURE SPACE-CHARGE-LIMITED ELECTRON CURRENT IN SILICON
[J].
DENDA, S
论文数:
0
引用数:
0
h-index:
0
DENDA, S
;
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(06)
:2412
-&
[3]
DULAND P, 1972, ELECTRONICS LETT, V8, P306
[4]
THEORY OF INSULATED-GATE FIELD-EFFECT TRANSISTORS NEAR AND BEYOND PINCH-OFF
[J].
GEURST, JA
论文数:
0
引用数:
0
h-index:
0
GEURST, JA
.
SOLID-STATE ELECTRONICS,
1966,
9
(02)
:129
-+
[5]
AVALANCHE BREAKDOWN CALCULATIONS FOR A PLANAR P-N JUNCTION
[J].
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
KENNEDY, DP
;
OBRIEN, RR
论文数:
0
引用数:
0
h-index:
0
OBRIEN, RR
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1966,
10
(03)
:213
-&
[6]
ION-IMPLANTED FET FOR POWER APPLICATIONS
[J].
LECROSNIER, DP
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN, LANNION, FRANCE
CTR NATL ETUD TELECOMMUN, LANNION, FRANCE
LECROSNIER, DP
;
PELOUS, GP
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN, LANNION, FRANCE
CTR NATL ETUD TELECOMMUN, LANNION, FRANCE
PELOUS, GP
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1974,
ED21
(01)
:113
-118
[7]
DEPLETION LAYER CAPACITANCE OF CYLINDRICAL AND SPHERICAL P-N JUNCTIONS
[J].
LEE, TP
论文数:
0
引用数:
0
h-index:
0
LEE, TP
;
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
.
SOLID-STATE ELECTRONICS,
1967,
10
(11)
:1105
-&
[8]
VDS VOLTAGE CAPABILITIES OF A DIFFUSED JFET WITH A VERTICAL-CHANNEL ARRANGEMENT
[J].
MORENZA, JL
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,LAB AUTOM & ANAL SYST,7 AVE COLONEL ROCHE,31400 TOULOUSE,FRANCE
CNRS,LAB AUTOM & ANAL SYST,7 AVE COLONEL ROCHE,31400 TOULOUSE,FRANCE
MORENZA, JL
;
ESTEVE, D
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,LAB AUTOM & ANAL SYST,7 AVE COLONEL ROCHE,31400 TOULOUSE,FRANCE
CNRS,LAB AUTOM & ANAL SYST,7 AVE COLONEL ROCHE,31400 TOULOUSE,FRANCE
ESTEVE, D
.
ELECTRONICS LETTERS,
1975,
11
(08)
:172
-174
[9]
TRANSITION FROM PENTODE- TO TRIODE-LIKE CHARACTERISTICS IN FIELD EFFECT TRANSISTORS
[J].
NEUMARK, GF
论文数:
0
引用数:
0
h-index:
0
NEUMARK, GF
;
RITTNER, ES
论文数:
0
引用数:
0
h-index:
0
RITTNER, ES
.
SOLID-STATE ELECTRONICS,
1967,
10
(04)
:299
-&
[10]
THEORY OF SURFACE GATE DIELECTRIC TRIODE
[J].
RITTNER, ES
论文数:
0
引用数:
0
h-index:
0
RITTNER, ES
;
NEUMARK, GF
论文数:
0
引用数:
0
h-index:
0
NEUMARK, GF
.
SOLID-STATE ELECTRONICS,
1966,
9
(09)
:885
-&
←
1
2
→