THEORY OF SURFACE GATE DIELECTRIC TRIODE

被引:14
作者
RITTNER, ES
NEUMARK, GF
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D O I
10.1016/0038-1101(66)90040-2
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:885 / &
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共 15 条
[1]   HETEROJUNCTION TRANSISTOR AND SPACE-CHARGE-LIMITED TRIODE [J].
BROJDO, S ;
RILEY, TJ ;
WRIGHT, GT .
BRITISH JOURNAL OF APPLIED PHYSICS, 1965, 16 (02) :133-&
[2]   CHARACTERISTICS OF THE DIELECTRIC DIODE AND TRIODE AT VERY HIGH FREQUENCIES [J].
BROJDO, S .
SOLID-STATE ELECTRONICS, 1963, 6 (06) :611-629
[3]  
CARMICHAEL RD, 1962, MATH TABLES FORMU 37, P268
[4]   THEORY OF INSULATED-GATE FIELD-EFFECT TRANSISTORS NEAR AND BEYOND PINCH-OFF [J].
GEURST, JA .
SOLID-STATE ELECTRONICS, 1966, 9 (02) :129-+
[5]  
GEURST JA, 1965, APR SPEC C THIN FILM
[6]  
Jolley L. B. W., 1961, SUMMATION SERIES
[7]  
RUPPEL W, 1959, RCA REV, V20, P702
[8]   TRANSISTOR ELECTRONICS - IMPERFECTIONS, UNIPOLAR AND ANALOG TRANSISTORS [J].
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1289-1313
[9]  
VINE J, 1962, P I ELECTRON ENGRS, VB109, P488
[10]   THEORY OF THE SPACE-CHARGE-LIMITED SURFACE-CHANNEL DIELECTRIC TRIODE [J].
WRIGHT, GT .
SOLID-STATE ELECTRONICS, 1964, 7 (02) :167-175