VDS VOLTAGE CAPABILITIES OF A DIFFUSED JFET WITH A VERTICAL-CHANNEL ARRANGEMENT

被引：4

作者：

MORENZA, JL ^{[1
]}

ESTEVE, D ^{[1
]}

机构：

[1] CNRS,LAB AUTOM & ANAL SYST,7 AVE COLONEL ROCHE,31400 TOULOUSE,FRANCE

来源：

ELECTRONICS LETTERS | 1975年 / 11卷 / 08期

关键词：

D O I：

10.1049/el:19750132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：172 / 174

页数：3

共 12 条

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ELECTRONICS LETTERS, 1973, 9 (15) :339-341

[2]

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YANG, ES .

SOLID-STATE ELECTRONICS, 1970, 13 (12) :1577-&

[4] ION-IMPLANTED FET FOR POWER APPLICATIONS [J].

LECROSNIER, DP ;

PELOUS, GP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) :113-118

[5]

MORENZA JL, 1974, 4 EUR SOL STAT DEV R

[6] A UNIPOLAR STRUCTURE APPLYING LATERAL DIFFUSION [J].

ROOSILD, SA ;

DOLAN, RP ;

ONEIL, D .

PROCEEDINGS OF THE IEEE, 1963, 51 (07) :1059-&

[7]

TESZNER S, 1972, IEEE T, VED19, P355

[8]

Yagi H., 1974, JEI - Japan Electronic Industry, V21, P18

[9]

YAGI H, 1974, JAPAN ELECTRON IND, V21, P22

[10]

YAGI H, 1974, JAPAN ELECTRON IND, V21, P28

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