THE INSULATED GATE TRANSISTOR - A NEW 3-TERMINAL MOS-CONTROLLED BIPOLAR POWER DEVICE

被引：126

作者：

BALIGA, BJ ^{[1
]}

ADLER, MS ^{[1
]}

LOVE, RP ^{[1
]}

GRAY, PV ^{[1
]}

ZOMMER, ND ^{[1
]}

机构：

[1] INTERSIL INC,CUPERTINO,CA

来源：

关键词：

D O I：

10.1109/T-ED.1984.21614

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：821 / 828

页数：8

共 8 条

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TEMPLE, VAK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (02) : 483 - 494
[2] Baliga B. J., 1982, International Electron Devices Meeting. Technical Digest, P264
[3] BALIGA BJ, 1979, ELECTRON LETT, V15, P645, DOI 10.1049/el:19790459
[4] SWITCHING LOTS OF WATTS AT HIGH SPEEDS
BALIGA, BJ
[J]. IEEE SPECTRUM, 1981, 18 (12) : 42 - 48
[5] BALIGA BJ, 1981, APPLIED SOLID STA SB, V2
[6] INSULATED-GATE PLANAR THYRISTORS .1. STRUCTURE AND BASIC OPERATION
PLUMMER, JD
SCHARF, BW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (02) : 380 - 387
[7] THE COMFET - A NEW HIGH CONDUCTANCE MOS-GATED DEVICE
RUSSELL, JP
GOODMAN, AM
GOODMAN, LA
NEILSON, JM
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) : 63 - 65
[8] Tihanyi J., 1980, International Electron Devices Meeting. Technical Digest, P75