GaAs(2511):: A new stable surface within the stereographic triangle

被引：46

作者：

Geelhaar, L ^{[1
]}

Márquez, J ^{[1
]}

Kratzer, P ^{[1
]}

Jacobi, K ^{[1
]}

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.86.3815

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The atomic structure of GaAs(2 5 11). a hitherto unknown stable surface, has been determined by in situ scanning tunneling microscopy and first-principles electronic structure calculations. This orientation is located within the stenographic triangle, i.e., far away: from all low-index surfaces. A low-energy (1 x 1) reconstruction containing arsenic dimers forms on the surface. The analysis of the surface structure shows that, for semiconductor sm-faces, the gain in stability due to minimization of the number of dangling bonds is more important than the gain from rendering a semiconducting ground state.

引用

页码：3815 / 3818

页数：4

共 26 条

[1] The structure of silicon surfaces from (001) to (111) [J].

Baski, AA ;

Erwin, SC ;

Whitman, LJ .

SURFACE SCIENCE, 1997, 392 (1-3) :69-85

[2] A STABLE HIGH-INDEX SURFACE OF SILICON - SI(5 5 12) [J].

BASKI, AA ;

ERWIN, SC ;

WHITMAN, LJ .

SCIENCE, 1995, 269 (5230) :1556-1560

[3]

Bimberg D., 1999, QUANTUM DOT HETEROST

[4] Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics [J].

Bockstedte, M ;

Kley, A ;

Neugebauer, J ;

Scheffler, M .

COMPUTER PHYSICS COMMUNICATIONS, 1997, 107 (1-3) :187-222

[5] ATOMIC-STRUCTURE OF CLEAN SI(113) SURFACES - THEORY AND EXPERIMENT [J].

DABROWSKI, J ;

MUSSIG, HJ ;

WOLFF, G .

PHYSICAL REVIEW LETTERS, 1994, 73 (12) :1660-1663

[6] Semiconductor surface reconstruction: The structural chemistry of two-dimensional surface compounds [J].

Duke, CB .

CHEMICAL REVIEWS, 1996, 96 (04) :1237-1259

[7] Structure and stability of Si(114)-(2x1) [J].

Erwin, SC ;

Baski, AA ;

Whitman, LJ .

PHYSICAL REVIEW LETTERS, 1996, 77 (04) :687-690

[8] Ab initio pseudopotentials for electronic structure calculations of poly-atomic systems using density-functional theory [J].

Fuchs, M ;

Scheffler, M .

COMPUTER PHYSICS COMMUNICATIONS, 1999, 119 (01) :67-98

[9] Atomic structure of the Ge(101) surface [J].

Gai, Z ;

Zhao, RG ;

Yang, WS .

PHYSICAL REVIEW B, 1998, 57 (12) :R6795-R6798

[10] Macroscopic and nanoscale faceting of germanium surfaces [J].

Gai, Z ;

Yang, WS ;

Zhao, RG ;

Sakurai, T .

PHYSICAL REVIEW B, 1999, 59 (23) :15230-15239

← 1 2 3 →