Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures

被引：17

作者：

Harris, JJ

Lee, KJ

Wang, T

Sakai, S

Bougrioua, Z

Moerman, I

Thrush, EJ

Webb, JB

Tang, H

Martin, T

Maude, DK

Portal, JC

机构：

[1] MPI, High Field Magnet Lab, CNRS, F-38046 Grenoble 9, France

[2] Def Evaluat & Res Agcy, Great Malvern WR14 3PS, Worcs, England

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[4] Thomas Swan Sci Equipment Ltd, Cambridge CB4 5UG, England

[5] Univ Ghent, IMEC, INTEC, B-9000 Ghent, Belgium

[6] Univ Tokushima, Dept Elect & Elect Engn, Satellite Venture Lab, Tokushima 7708577, Japan

[7] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2001年 / 16卷 / 05期

关键词：

D O I：

10.1088/0268-1242/16/5/321

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier transport in a set of AlGaN/GaN heterostructures from different sources with a range of carrier densities and mobilities has been investigated at low temperature and high magnetic fields. The Shubnikov-de Haas oscillations have been analysed to extract the quantum scattering lifetime, tau (q), and this is compared with the classical transport lifetime, tau (t), derived from the low-field mobility. The relationship between these parameters has been observed to depend systematically on the low-field mobility of the samples studied, and indicates that higher-mobility samples suffer less scattering from centres close to the two-dimensional conducting channel.

引用

页码：402 / 405

页数：4

共 24 条

[1] Piezoelectric charge densities in AlGaN/GaN HFETs [J].