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Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures

被引：17
作者：
Harris, JJ
Lee, KJ
Wang, T
Sakai, S
Bougrioua, Z
Moerman, I
Thrush, EJ
Webb, JB
Tang, H
Martin, T
Maude, DK
Portal, JC
机构：
[1] MPI, High Field Magnet Lab, CNRS, F-38046 Grenoble 9, France
[2] Def Evaluat & Res Agcy, Great Malvern WR14 3PS, Worcs, England
[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[4] Thomas Swan Sci Equipment Ltd, Cambridge CB4 5UG, England
[5] Univ Ghent, IMEC, INTEC, B-9000 Ghent, Belgium
[6] Univ Tokushima, Dept Elect & Elect Engn, Satellite Venture Lab, Tokushima 7708577, Japan
[7] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2001年 / 16卷 / 05期
关键词：
D O I：
10.1088/0268-1242/16/5/321
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Carrier transport in a set of AlGaN/GaN heterostructures from different sources with a range of carrier densities and mobilities has been investigated at low temperature and high magnetic fields. The Shubnikov-de Haas oscillations have been analysed to extract the quantum scattering lifetime, tau (q), and this is compared with the classical transport lifetime, tau (t), derived from the low-field mobility. The relationship between these parameters has been observed to depend systematically on the low-field mobility of the samples studied, and indicates that higher-mobility samples suffer less scattering from centres close to the two-dimensional conducting channel.
引用
收藏
页码：402 / 405
页数：4
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