Kinetics of interfacial charges in hybrid GaAs/oligothiophene semiconducting heterojunctions

被引:9
作者
Cabanillas-Gonzalez, Juan [1 ]
Gambetta, Alessio [1 ]
Zavelani-Rossi, Margherita [1 ]
Lanzani, Guglielmo [1 ]
机构
[1] Politecn Milan, INFM, ULTRAS, Dipartmento Fis,IFN CNR, I-20133 Milan, Italy
关键词
D O I
10.1063/1.2771038
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report on pump-probe measurements in a hybrid heterostructure consisting of a modified oligothiophene layer deposited over a GaAs substrate. Upon photoexcitation of the bilayer with 100 fs, a new photoinduced absorption band (PA(2)) appeared being attributed to oligothiophene cations arising from exciton diffusion and dissociation at the hybrid inorganic/organic interface. An exciton diffusion length in the organic layer of approximately 3.4 nm was estimated. (c) 2007 American Institute of Physics.
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页数:3
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