Formation of pyramid-like structures in the growth of epitaxial Fe/GaAs(001) films

被引：16

作者：

Gester, M ^{[1
]}

Daboo, C ^{[1
]}

Gray, SJ ^{[1
]}

Bland, JAC ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1997年 / 165卷 / 1-3期

关键词：

thin films; epitaxial; metal/semiconductor; LEED; surface structure; step anisotropy;

D O I：

10.1016/S0304-8853(96)00520-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a low energy electron diffraction (LEED) study of the surface structure of epitaxial Fe films on GaAs(001) substrates during deposition. Layers and islands grow simultaneously and the substrate is totally covered after the equivalent of 3 monolayers of Fe are deposited. Analysis of LEED spot shapes reveals that the Fe surface contains steps which are aligned predominantly parallel to the (110) direction. At Fe thicknesses exceeding 50 Angstrom, the steps form regular arrays which give rise to pyramid-like structures.

引用

页码：242 / 245

页数：4

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