Reversible Hydrogenation and Bandgap Opening of Graphene and Graphite Surfaces Probed by Scanning Tunneling Spectroscopy

被引:46
作者
Castellanos-Gomez, Andres [1 ,2 ]
Wojtaszek, Magdalena [1 ]
Arramel [1 ]
Tombros, Nikolaos [1 ]
van Wees, Bart J. [1 ]
机构
[1] Univ Groningen, Zernike Inst Adv Mat, NL-9700 AB Groningen, Netherlands
[2] Univ Autonoma Madrid, Dept Fis Materia Condensada C 3, E-28049 Madrid, Spain
关键词
electronic structure; graphene; graphite; hydrogenation; scanning tunneling microscopy; ADSORPTION; IMAGES; GAS;
D O I
10.1002/smll.201101908
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The effects of hydrogenation on the topography and electronic properties of graphene and graphite surfaces are studied by scanning tunneling microscopy and spectroscopy. The surfaces are chemically modified using an Ar/H2 plasma. By analyzing thousands of scanning tunneling spectroscopy measurements it is determined that the hydrogen chemisorption on the surface of graphite/graphene opens on average an energy bandgap of 0.4 eV around the Fermi level. Although the plasma treatment modifies the surface topography in an irreversible way, the change in the electronic properties can be reversed by moderate thermal annealing and the samples can be hydrogenated again to yield a similar, but slightly reduced, semiconducting behavior after the second hydrogenation.
引用
收藏
页码:1607 / 1613
页数:7
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