Photorefractive p-i-n diode quantum well operating at 1.55 mu m

被引：11

作者：

DeMatos, C ^{[1
]}

LeCorre, A ^{[1
]}

LHaridon, H ^{[1
]}

Lambert, B ^{[1
]}

Salaun, S ^{[1
]}

Pleumeekers, J ^{[1
]}

Gosselin, S ^{[1
]}

机构：

[1] INSA RENNES,PHYS SOLIDES LAB,F-35043 RENNES,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 25期

关键词：

D O I：

10.1063/1.116642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the performance of a semiconductor photorefractive p-i-n diode operating at 1.55 mu m in the longitudinal quantum-confined Stark geometry. The device structure consists of a semi-insulating InP-GaInAs(P) multiple quantum well, sandwiched between two trapping regions, and embedded in a p-n junction. In this structure, the measured output diffraction efficiency reaches 0.6%. This value is close to the output diffraction efficiency value estimated from electroabsorption measurements. (C) 1996 American Institute of Physics.

引用

页码：3576 / 3578

页数：3

共 16 条

[1] HIGH-RESOLUTION SPATIAL LIGHT MODULATORS USING GAAS/ALGAAS MULTIPLE-QUANTUM WELLS [J].