HIGH-RESOLUTION SPATIAL LIGHT MODULATORS USING GAAS/ALGAAS MULTIPLE-QUANTUM WELLS

被引：23

作者：

BOWMAN, SR ^{[1
]}

RABINOVICH, WS ^{[1
]}

KYONO, CS ^{[1
]}

KATZER, DS ^{[1
]}

IKOSSIANASTASIOU, K ^{[1
]}

机构：

[1] USN,RES LAB,DIV ELECTR SCI & TECHNOL,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 08期

关键词：

D O I：

10.1063/1.112160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report improved performance in semi-insulating GaAs/AlGaAs quantum well based spatial light modulators grown by molecular beam epitaxy. The optically addressed modulator reported here are of a new design and have significantly higher spatial resolution than previously reported devices. Strong diffraction efficiencies are described for spatial periods as fine as 2.6 mum at framing rate as high as 600 kHz. Two modulators are characterized, one with x=0.1 and the other with x=0.3 for the Al(x)Ga(1-x)As quantum barriers of the superlattices.

引用

页码：956 / 958

页数：3

共 6 条

[1] GAAS/ALGAAS MULTIQUANTUM-WELL RESONANT PHOTOREFRACTIVE DEVICES FABRICATED USING EPITAXIAL LIFT-OFF [J].

KYONO, CS ;

IKOSSIANASTASIOU, K ;

RABINOVICH, WS ;

BOWMAN, SR ;

KATZER, DS ;

TSAO, AJ .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2244-2246

[2] RESONANT PHOTODIFFRACTIVE EFFECT IN SEMI-INSULATING MULTIPLE QUANTUM-WELLS [J].

NOLTE, DD ;

OLSON, DH ;

DORAN, GE ;

KNOX, WH ;

GLASS, AM .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1990, 7 (11) :2217-2225

[3] CR-DOPED GAAS/ALGAAS SEMIINSULATING MULTIPLE QUANTUM-WELL PHOTOREFRACTIVE DEVICES [J].

PARTOVI, A ;

GLASS, AM ;

OLSON, DH ;

ZYDZIK, GJ ;

OBRYAN, HM ;

CHIU, TH ;

KNOX, WH .

APPLIED PHYSICS LETTERS, 1993, 62 (05) :464-466

[4] EFFECT OF CARRIER ESCAPE TIME ON THE PERFORMANCE OF SEMIINSULATING PHOTOREFRACTIVE SELF-ELECTRO-OPTIC EFFECT DEVICES [J].

PARTOVI, A ;

GLASS, AM ;

ZYDZIK, GJ ;

OBRYAN, HM ;

CHIU, TH ;

KNOX, WH .

APPLIED PHYSICS LETTERS, 1993, 62 (24) :3088-3090

[5] ELECTRICAL CHARACTERISTICS OF LOW TEMPERATURE-AL0.3GA0.7AS [J].

VERMA, AK ;

TU, J ;

SMITH, JS ;

FUJIOKA, H ;

WEBER, ER .

JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (12) :1417-1420

[6] EXTREME SELECTIVITY IN THE LIFT-OFF OF EPITAXIAL GAAS FILMS [J].

YABLONOVITCH, E ;

GMITTER, T ;

HARBISON, JP ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1987, 51 (26) :2222-2224

← 1 →