EFFECT OF CARRIER ESCAPE TIME ON THE PERFORMANCE OF SEMIINSULATING PHOTOREFRACTIVE SELF-ELECTRO-OPTIC EFFECT DEVICES

被引：13

作者：

PARTOVI, A ^{[1
]}

GLASS, AM ^{[1
]}

ZYDZIK, GJ ^{[1
]}

OBRYAN, HM ^{[1
]}

CHIU, TH ^{[1
]}

KNOX, WH ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the effect of carrier escape time on the performance of semi-insulating photorefractive self-electro-optic effect devices by investigating three samples of Cr-doped GaAs/AlxGa1-xAs multiple quantum wells of varying barrier thickness and height. Reduction of barrier thickness from 100 to 35 angstrom and Al fraction from 0.42 to 0.29 results in a three orders of magnitude increase in diffraction efficiency at a given voltage. The effect of shorter carrier escape and sweep-out times on the diffraction efficiency, resolution, and sensitivity of these devices is discussed.

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页码：3088 / 3090

页数：3

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