Lateral variation of quantum-well confinement energy in triangular-shaped dot-like structures grown by molecular beam epitaxy on patterned GaAs (311)A substrates

被引：8

作者：

Niu, ZC ^{[1
]}

Notzel, R ^{[1
]}

Jahn, U ^{[1
]}

Ramsteiner, M ^{[1
]}

Schonherr, HP ^{[1
]}

Fricke, J ^{[1
]}

Xiao, ZB ^{[1
]}

Daweritz, L ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 67卷 / 02期

关键词：

D O I：

10.1007/s003390050750

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly ordered triangular-shaped dot-like (TD) structures are grown by molecular beam epitaxy (MBE) on patterned GaAs (311)A substrates and imaged by atomic force microscopy (AFM). The lateral variation of the quantum-well (QW) confinement energy in the TD structures is revealed by low-temperature cathodoluminescence (CL) and micro-photoluminescence (In-PL) spectroscopy. The CL emission centered at 783 nm, 772 nm and 767 nm correspond to three distinct regions of the TD structure identifying lateral energy barriers around the top portion of the TD structure induced by variations of the QW width. The mu-PL spectra further show well-resolved peaks originating from the three portions of the TD structure indicating a lateral energy barrier of 13 meV between the top portion and the nearby smooth regions with efficient radiative recombination.

引用

页码：135 / 138

页数：4

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