Formation and characterization of coupled quantum dots (CQDs) by selective area metalorganic vapor phase epitaxy

被引：40

作者：

Kumakura, K

Motohisa, J

Fukui, T

机构：

[1] Res. Ctr. Interface Quant. E., Hokkaido University, Sapporo 060

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(96)00641-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have demonstrated novel GaAs quantum dot arrays coupled to quantum wire networks, that is, coupled quantum dots (CQDs) formed by selective area metalorganic vapor phase epitaxy (SA-MOVPE). First, GaAs buffer layers are grown on GaAs(001) substrates with SiNx square masks in 400 nm periodicity to [100] and [010] directions. GaAs cross-wire structures with pyramids at the corners are obtained. Next, GaAs/AlGaAs quantum wells are overgrown on top of these structures. Quantum dots (QDs) and quantum wires (QWRs) are formed at the top portions of the pyramids and at the ridges of wires, respectively. The cathodoluminescence (CL) image shows strong emission from the top portions of the pyramids, which suggests that high-quality CQD structures are formed by SA-MOVPE.

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页码：700 / 704

页数：5

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