Hydrogen annealing of arrays of planar and vertically stacked Si nanowires

被引：42

作者：

Dornel, E. ^{[1
]}

Ernst, T. ^{[1
]}

Barbe, J. C. ^{[1
]}

Hartmann, J. M. ^{[1
]}

Delaye, V. ^{[1
]}

Aussenac, F. ^{[1
]}

Vizioz, C. ^{[1
]}

Borel, S. ^{[1
]}

Maffini-Alvaro, V. ^{[1
]}

Isheden, C. ^{[1
]}

Foucher, J. ^{[1
]}

机构：

[1] CEA, LETI, F-38054 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 23期

关键词：

D O I：

10.1063/1.2818678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Four level matrices of round, 35 nm in diameter Si nanowires (NWs) are obtained thanks to a top-down approach. In particular, we report optimized H-2 annealing conditions (800 to 900 degrees C) in order to reconstruct the plasma-etched surfaces of the suspended nanowires. The nanowire shape evolution has been studied in scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. The side roughness decrease and the rounding of the NWs have been quantified. The instability of the anchors of the NWs to the contact regions has been evidenced and confirmed by surface diffusion simulations. (c) 2007 American Institute of Physics.

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页数：3

相关论文

共 14 条

[1] Low thermal budget surface preparation of Si and SiGe [J].

Abbadie, A ;

Hartmann, JM ;

Holliger, P ;

Séméria, MN ;

Besson, P ;

Gentile, P .

APPLIED SURFACE SCIENCE, 2004, 225 (1-4) :256-266

[2] Control of selectivity between SiGe and Si in isotropic etching processes [J].

Borel, S ;

Arvet, C ;

Bilde, J ;

Caubet, V ;

Louis, D .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (6B) :3964-3966

[3] Surface diffusion dewetting of thin solid films:: Numerical method and application to Si/SiO2 [J].

Dornel, E ;

Barbé, JC ;

de Crécy, F ;

Lacolle, G ;

Eymery, J .

PHYSICAL REVIEW B, 2006, 73 (11)

[4]

DORNEL E, 2006, MAT RES S P, V910, pA4

[5]

ERNST T, 2006, IEDM, P997

[6] Growth of SiGe/Si superlattices on silicon-on-insulator substrates for multi-bridge channel field effect transistors [J].

Hartmann, JM ;

Holliger, P ;

Laugier, F ;

Rolland, G ;

Suhm, A ;

Ernst, T ;

Billon, T ;

Vulliet, N .

JOURNAL OF CRYSTAL GROWTH, 2005, 283 (1-2) :57-67

[7] Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates [J].

Jahan, C ;

Faynot, O ;

Tosti, L ;

Hartmann, JM .

JOURNAL OF CRYSTAL GROWTH, 2005, 280 (3-4) :530-538

[8] Thermal annealing in hydrogen for 3-D profile transformation on silicon-on-insulator and sidewall roughness reduction [J].

Lee, MCM ;

Wu, MC .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2006, 15 (02) :338-343

[9]

MAZZONI G, 1997, IEEE T ELECTRON DEV, V46, P1423

[10] Capillary instabilities in solid thin films: Lines [J].

McCallum, MS ;

Voorhees, PW ;

Miksis, MJ ;

Davis, SH ;

Wong, H .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7604-7611