Control of selectivity between SiGe and Si in isotropic etching processes

被引：20

作者：

Borel, S

Arvet, C

Bilde, J

Caubet, V

Louis, D

机构：

[1] CEA Leti, F-38054 Grenoble 9, France

[2] ST Microelect, F-38019 Grenoble, France

[3] ST Microelect, F-38920 Crolles, France

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 6B期

关键词：

isotropic etching; selectivity; Si; SiGe; passivation; oxide; nitride; fluorocarbon polymer;

D O I：

10.1143/JJAP.43.3964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The selectivity between SiGe and Si has been investigated in chemical dry etching. Starting from a pure CF4 process that etches SiGe with a good selectivity to Si, the modification of the gas mixture was studied with the aim of understanding the way these materials are etched in the presence of O-2, N-2 and/or CH2F2. Passivation phenomena were used to show that invert selectivities can be obtained. Their combination leads to ultrahigh Si:SiGe selectivity.

引用

页码：3964 / 3966

页数：3

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