EFFECT OF OXYGEN ON FLUORINE-BASED REMOTE PLASMA-ETCHING OF SILICON AND SILICON DIOXIDE

被引：20

作者：

LOEWENSTEIN, LM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575221

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1984 / 1988

页数：5

共 23 条

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