MASS-SPECTROMETRIC TRANSIENT STUDY OF DC PLASMA-ETCHING OF SI IN CF4 AND CF4/O2 MIXTURES

被引：4

作者：

BRANDT, WW ^{[1
]}

HONDA, T ^{[1
]}

机构：

[1] UNIV WISCONSIN,SURFACE STUDIES LAB,MILWAUKEE,WI 53201

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 01期

关键词：

D O I：

10.1063/1.335385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：119 / 122

页数：4

共 14 条

[1]

BRANDT WW, UNPUB

[2]

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[4] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J].

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CHEN, M .

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[5] DEPENDENCE OF F-ATOM DENSITY ON PRESSURE AND FLOW-RATE IN CF4 GLOW-DISCHARGES AS DETERMINED BY EMISSION-SPECTROSCOPY [J].

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CHEN, M .

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[6] PLASMA-ETCHING OF SI AND SIO2 IN SF6-O2 MIXTURES [J].

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FLAMM, DL .

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[7] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J].

EISELE, KM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) :123-126

[8]

HARSHBARGER WR, 1977, APPL SPECTROSC, V31, P210

[9] NEW CHEMICAL DRY ETCHING [J].

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[10] STUDY BY ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS OF SILICON, SIO2 AND SI3N4 SURFACES TREATED WITH VARIOUS CF4-CONTAINING PLASMAS [J].

LICCIARDELLO, A ;

PIGNATARO, S ;

PANCZEL, M .

SURFACE TECHNOLOGY, 1983, 18 (03) :189-199

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