HIGH-RESOLUTION REACTIVE ION ETCHING OF SIGE ALLOYS

被引：7

作者：

COUILLARD, JG

CRAIGHEAD, HG

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586777

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial Si1-xGex (x = 0.08-0.12) films were reactive ion etched in fluorine- and chlorine-based plasmas. The etch characteristics are similar to those for pure Si. By studying the effects of the etch parameters, such as power, pressure, and gas composition a statistical model of the etch process for SiGe in CF4/H-2 Plasmas has been produced. This etching method has been successfully applied to the fabrication of features in SiGe below 0.1 mum, smaller than any yet reported. This result encourages further progress in the development of SiGe-based submicron devices.

引用

页码：717 / 719

页数：3

共 12 条

[1] TECHNIQUE FOR SELECTIVE ETCHING OF SI WITH RESPECT TO GE [J].

BRIGHT, AA ;

IYER, SS ;

ROBEY, SW ;

DELAGE, SL .

APPLIED PHYSICS LETTERS, 1988, 53 (23) :2328-2329

[2] REACTIVE ION ETCHING OF EPITAXIAL ZNSE THIN-FILMS [J].

CLAUSEN, EM ;

CRAIGHEAD, HG ;

SCHIAVONE, LM ;

TAMARGO, MC ;

DEMIGUEL, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1889-1891

[3]

COUILLARD JG, UNPUB

[4] BALLISTIC ELECTRON-EMISSION MICROSCOPY OF LATERALLY PATTERNED MICROSTRUCTURES [J].

DAVIES, A ;

COUILLARD, JG ;

CRAIGHEAD, HG .

APPLIED PHYSICS LETTERS, 1992, 61 (09) :1040-1042

[5]

DIXON WJ, 1969, INTRO STATISTICAL AN

[6] RIE CONTAMINATION OF ETCHED SILICON SURFACES [J].

EPHRATH, LM ;

BENNETT, RS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1822-1826

[7]

JENKINS MW, 1986, SOLID STATE TECHNOL, P175

[8] SELECTIVE REMOVAL OF A SI0.7GE0.3 LAYER FROM SI(100) [J].

KRIST, AH ;

GODBEY, DJ ;

GREEN, NP .

APPLIED PHYSICS LETTERS, 1991, 58 (17) :1899-1901

[9] OXIDATION STUDIES OF SIGE [J].

LEGOUES, FK ;

ROSENBERG, R ;

NGUYEN, T ;

HIMPSEL, F ;

MEYERSON, BS .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) :1724-1728

[10] SELECTIVE DRY ETCHING OF SILICON WITH RESPECT TO GERMANIUM [J].

OEHRLEIN, GS ;

BESTWICK, TD ;

JONES, PL ;

CORBETT, JW .

APPLIED PHYSICS LETTERS, 1990, 56 (15) :1436-1438

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