Hot electron induced degradation of undoped AlGaN/GaN HFETs

被引：26

作者：

Kim, H ^{[1
]}

Vertiatchikh, A ^{[1
]}

Thompson, RM ^{[1
]}

Tilak, V ^{[1
]}

Prunty, TR ^{[1
]}

Shealy, JR ^{[1
]}

Eastman, LF ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14850 USA

来源：

MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 06期

关键词：

D O I：

10.1016/S0026-2714(03)00066-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents the effects of hot electron stress on the degradation of undoped Al0.3GaN0.7/GaN power HFET's with SiN passivation. Typical degradation characteristics consist of a decrease in the drain current and maximum transconductance, an increase in the drain series resistance, gate leakage and a subthreshold current. Degradation mechanism has been investigated by means of gate lag measurements (pulsed I-V) and current-mode deep level transient spectroscopy (DLTS). Stressed devices suffered from aggravated drain current slump (DC to RF dispersion) which indicates possible changes in surface charge profiles occurred during hot electron stress test. The DLTS was used to identify the trap creation by hot electron stress. The DLTS spectra of stressed device revealed the evidence of trap creation due to hot electron stress. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：823 / 827

页数：5

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