Reliability evaluation of AlGaN/GaN HEMTs grown on SiC substrate

被引：11

作者：

Lee, C ^{[1
]}

Witkowski, L ^{[1
]}

Muir, M ^{[1
]}

Tserng, HQ ^{[1
]}

Saunier, P ^{[1
]}

Wang, H ^{[1
]}

Yang, J ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] TriQuint Semicond Texas, Richardson, TX 75080 USA

来源：

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/LECHPD.2002.1146785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN HEMTs have achieved record output power densities at microwave frequencies; however, reliability of these devices is still a major concern. In this paper, the results of DC and RF stress tests at several drain voltages of passivated 75 mum. devices are discussed. After DC stress for 48 hours, negligible differences in IN and small signal performance were observed in some devices, while significant reduction in drain current, decrease in transconductance, and increase in on-resistance were measured in some other devices. RF stress for 40 hours has resulted in lower transconductance and drain current and degradation in power performance at 10 GHz. A comprehensive comparison of equivalent circuit models before and after stress is presented.

引用

页码：436 / 442

页数：7

共 6 条

[1] Evaluation of the temperature stability of AlGaN/GaN heterostructure FET's [J].