Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

被引：146

作者：

Zhang, R. ^{[1
]}

Iwasaki, T. ^{[1
]}

Taoka, N. ^{[1
]}

Takenaka, M. ^{[1
]}

Takagi, S. ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 11期

关键词：

GE; OPPORTUNITIES; CHALLENGES; MOSFETS;

D O I：

10.1063/1.3564902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electron cyclotron resonance (ECR) plasma postoxidation method has been employed for forming Al2O3/GeOx/Ge metal-oxide-semiconductor (MOS) structures. X-ray photoelectron spectroscopy and transmission electron microscope characterizations have revealed that a GeOx layer is formed beneath the Al2O3 capping layer by exposing the Al2O3/Ge structures to ECR oxygen plasma. The interface trap density (D-it) of Au/Al2O3/GeOx/Ge MOS capacitors is found to be significantly suppressed down to lower than 10(11) cm(-2) eV(-1). Especially, a plasma postoxidation time of as short as 10 s is sufficient to reduce Dit with maintaining the equivalent oxide thickness (EOT). As a result, the minimum Dit values and EOT of 5 x 10(10) cm(-2) eV(-1) and 1.67 nm, and 6 x 10(10) cm(-2) eV(-1) and 1.83 nm have been realized for Al2O3/GeOx/Ge MOS structures with p- and n-type substrates, respectively. (C) 2011 American Institute of Physics. [doi:10.1063/1.3564902]

引用

收藏

页数：3

相关论文

共 22 条

[1] Passivation of Ge(100)/GeO2/high-κ gate stacks using thermal oxide treatments [J].

Bellenger, F. ;

Houssa, M. ;

Delabie, A. ;

Afanas'ev, V. V. ;

Conard, T. ;

Caymax, M. ;

Meuris, M. ;

De Meyer, K. ;

Heyns, M. M. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (02) :G33-G38

[2] RAPID INTERFACE PARAMETERIZATION USING A SINGLE MOS CONDUCTANCE CURVE [J].

BREWS, JR .

SOLID-STATE ELECTRONICS, 1983, 26 (08) :711-716

[3] Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide [J].

Delabie, Annelies ;

Bellenger, Florence ;

Houssa, Michel ;

Conard, Thierry ;

Van Elshocht, Sven ;

Caymax, Matty ;

Heyns, Marc ;

Meuris, Marc .

APPLIED PHYSICS LETTERS, 2007, 91 (08)

[4] Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices [J].

Hosoi, Takuji ;

Kutsuki, Katsuhiro ;

Okamoto, Gaku ;

Saito, Marina ;

Shimura, Takayoshi ;

Watanabe, Heiji .

APPLIED PHYSICS LETTERS, 2009, 94 (20)

[5]

IWASAKI T, 2009, SEM INT SPEC C SISC, P30

[6]

Kita K., 2007, ECS Transactions, V11, P461

[7] Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack [J].

Kobayashi, Masaharu ;

Thareja, Gaurav ;

Ishibashi, Masato ;

Sun, Yun ;

Griffin, Peter ;

McVittie, Jim ;

Pianetta, Piero ;

Saraswat, Krishna ;

Nishi, Yoshio .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (10)

[8] New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development [J].

Martens, Koen ;

De Jaeger, Brice ;

Bonzom, Renaud ;

Van Steenbergen, Jan ;

Meuris, Marc ;

Groeseneken, Guido ;

Maes, Herman .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (05) :405-408

[9]

Matsubara H., 2007, INT C SOL STAT DEV M, V18

[10] Evidence of low interface trap density in GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation [J].

Matsubara, Hiroshi ;

Sasada, Takashi ;

Takenaka, Mitsuru ;

Takagi, Shinichi .

APPLIED PHYSICS LETTERS, 2008, 93 (03)