New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development

被引：72

作者：

Martens, Koen ^{[2
]}

De Jaeger, Brice

Bonzom, Renaud

Van Steenbergen, Jan

Meuris, Marc

Groeseneken, Guido

Maes, Herman

机构：

[1] Katholieke Univ Leuven, ESAT Dept, B-3001 Heverlee, Belgium

[2] IMEC, B-3001 Heverlee, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 05期

关键词：

conductance method; electrical characterization; Fermi-level pinning; Ge MOSFET; interface state density extraction;

D O I：

10.1109/LED.2006.873767

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method for extracting parameters of weakly Fermi-level pinned germanium (Ge) capacitors is introduced. This method makes progress toward a more generally valid reliable interface state parameter extraction. Such a general method is needed to evaluate and explain the behavior of Ge MOS capacitors, which show characteristics deviating considerably from silicon. The encountered weak pinning confirmed by the new extraction method explains the degraded Ge nMOSFET performance.

引用

页码：405 / 408

页数：4

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