Epitaxial diamond on a Si/CaF2/Ir substrate

被引：14

作者：

Lee, CH

Qi, J

Lee, ST

Hung, LS ^{[1
]}

机构：

[1] City Univ Hong Kong, COSDAF, Kowloon, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

来源：

DIAMOND AND RELATED MATERIALS | 2003年 / 12卷 / 08期

关键词：

diamond; iridium; Si; buffer layer; heteroepitaxial growth;

D O I：

10.1016/S0925-9635(03)00083-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High quality epitaxial iridium films were grown on Si by using a fluoride as an intermediate layer. The epitaxial insulating layer acts as a diffusion barrier to impede film-substrate reactions at elevated temperatures and as a buffer layer for interface matching between lattice-mismatched metals and Si. Diamond deposited on the multilayer structure showed epitaxial growth. (C) 2003 Elsevier Science B.V. All rights reserved.

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页码：1335 / 1339

页数：5

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