Growth mechanism and morphology of Ge on Pb covered Si(111)surfaces

被引：17

作者：

Hwang, IS

Chang, TC

Tsong, TT ^{[1
]}

机构：

[1] Acad Sinica, Inst Phys, Taipei, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

来源：

SURFACE SCIENCE | 1998年 / 410卷 / 2-3期

关键词：

diffusion and migration; epitaxy; growth; morphology; nucleation; scanning tunneling microscopy; silicon;

D O I：

10.1016/S0039-6028(98)00323-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We study the mechanism and surface morphology in epitaxial growth of Ge on Pb covered Si(lll) using a scanning tunneling microscope (STM). We find that Ge adatoms have a very large diffusion length at room temperature. The growth is close to perfect layer-by-layer for the first two bilayers. Surface roughness increases gradually with the film thickness, but no 3D islands are found at room temperature. For growth at similar to 200 degrees C, 3D Ge islands appear after completion of the second bilayer. At room temperature, we believe, the Pb layer enhances surface diffusion and the descending-step motion of Ge adatoms, but the ascending-step motion is hindered and thus 3D island growth is suppressed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：L741 / L747

页数：7

共 40 条

[1] Site exchange of Ge and Sb on Si(100) during surfactant-mediated epitaxial growth [J].