Bending experiment on pentacene field-effect transistors on plastic films

被引：211

作者：

Sekitani, T

Kato, Y

Iba, S

Shinaoka, H

Someya, T

Sakurai, T

Takagi, S

机构：

[1] Univ Tokyo, Sch Engn, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Ctr Collaborat Res, Meguro Ku, Tokyo 1538505, Japan

[3] Univ Tokyo, Grad Sch Frontier Sci, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 07期

关键词：

D O I：

10.1063/1.1868868

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated very flexible pentacene field-effect transistors with polyimide gate dielectric layers on plastic films with a mobility of 0.3 cm(2)/V s and an on/off ratio of 10(5), and have measured their electrical properties under various compressive and tensile strains while changing the bending radius of the base plastic films systematically. We have found that the change in source-drain current with bending radius is reproducible and reversible when the bending radius is above 4.6 mm, which corresponds to strains of similar to1.4 +/- 0.1%. Furthermore, the change in source-drain current does not depend on the direction of strain versus direction of current flow. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

相关论文

共 12 条

[1] HOPPING CONDUCTIVITY IN DISORDERED SYSTEMS [J].

AMBEGAOKAR, V ;

HALPERIN, BI ;

LANGER, JS .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (08) :2612-+

[2] Failure resistance of amorphous silicon transistors under extreme in-plane strain [J].

Gleskova, H ;

Wagner, S ;

Suo, Z .

APPLIED PHYSICS LETTERS, 1999, 75 (19) :3011-3013

[3] Electrical response of amorphous silicon thin-film transistors under mechanical strain [J].

Gleskova, H ;

Wagner, S ;

Soboyejo, W ;

Suo, Z .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) :6224-6229

[4] Impact of strained-Si channel on complementary metal oxide semiconductor circuit performance under the sub-100 nm regime [J].

Hatakeyama, T ;

Matsuzawa, K ;

Takagi, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (4B) :2627-2632

[5] High mobility of pentacene field-effect transistors with polyimide gate dielectric layers [J].

Kato, Y ;

Iba, S ;

Teramoto, R ;

Sekitani, T ;

Someya, T ;

Kawaguchi, H ;

Sakurai, T .

APPLIED PHYSICS LETTERS, 2004, 84 (19) :3789-3791

[6]

Kittel C., 1986, INTRO SOLID STATE PH

[7] Low threshold current density operation of 1.16 μm highly strained GaInAs/GaAs vertical cavity surface emitting lasers on (100) GaAs substrate [J].

Kondo, T ;

Arai, M ;

Azuchi, M ;

Uchida, T ;

Matsutani, A ;

Miyamoto, T ;

Koyama, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (5B) :L562-L564

[8] Stretchable gold conductors on elastomeric substrates [J].

Lacour, SP ;

Wagner, S ;

Huang, ZY ;

Suo, Z .

APPLIED PHYSICS LETTERS, 2003, 82 (15) :2404-2406

[9] Soft, conformable electrical contacts for organic semiconductors: High-resolution plastic circuits by lamination [J].

Loo, YL ;

Someya, T ;

Baldwin, KW ;

Bao, ZN ;

Ho, P ;

Dodabalapur, A ;

Katz, HE ;

Rogers, JA .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2002, 99 (16) :10252-10256

[10] A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications [J].

Someya, T ;

Sekitani, T ;

Iba, S ;

Kato, Y ;

Kawaguchi, H ;

Sakurai, T .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2004, 101 (27) :9966-9970