Low threshold current density operation of 1.16 μm highly strained GaInAs/GaAs vertical cavity surface emitting lasers on (100) GaAs substrate

被引：8

作者：

Kondo, T ^{[1
]}

Arai, M ^{[1
]}

Azuchi, M ^{[1
]}

Uchida, T ^{[1
]}

Matsutani, A ^{[1
]}

Miyamoto, T ^{[1
]}

Koyama, F ^{[1
]}

机构：

[1] Tokyo Inst Technol, Microsyst Res Ctr, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 5B期

关键词：

GaInAs/GaAs; highly strained; VCSEL; (100) GaAs substrate;

D O I：

10.1143/JJAP.41.L562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate highly strained GaInAs/GaAs quantum well (QW) vertical cavity surface emitting, lasers (VCSELs) emitting at 1.16 mum with a low threshold current density and high efficiency in the 1.2-mum-wavelength band. The VCSEL structure was monolithically grown on a (100) n-type GaAs Substrate by low-pressure metalorganic vapor phase epitaxy (MOVPE). The threshold Current is 3 mA for a 10 x 10 mum(2) oxide aperture device, corresponding to a threshold current density of 3 kA/cm(2). The maximum Output power ismore than 2 mW. The maximum CW operating temperature is 85degreesC and the threshold current is almost constant in temperature range of 25-75degreesC.

引用

收藏

页码：L562 / L564

页数：3

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