InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3μm

被引：211

作者：

Lott, JA

Ledentsov, NN

Ustinov, VM

Maleev, NA

Zhukov, AE

Kovsh, AR

Maximov, MV

Volovik, BV

Alferov, ZI

Bimberg, D

机构：

[1] USAF, Inst Technol, Dept Elect & Comp Engn, Wright Patterson AFB, OH 45433 USA

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[4] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 16期

关键词：

D O I：

10.1049/el:20000988

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pulsed lasing at 1.31 mu m via the exciton ground state is demonstrated for vertical cavity surface emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The structures are grown directly on GaAs substrates and when fabricated include selectively oxidised AlO current apertures, intracavity metal contacts, and AlO/GaAs distributed Bragg reflectors. Experimental devices operate pulsed at room temperature with threshold currents below 2mA and differential slope efficiencies above 40%.

引用

收藏

页码：1384 / 1385

页数：2

相关论文

共 14 条

[1] GaAsSb:: A novel material for 1.3μm VCSELs [J].

Anan, T ;

Nishi, K ;

Sugou, S ;

Yamada, M ;

Tokutome, K ;

Gomyo, A .

ELECTRONICS LETTERS, 1998, 34 (22) :2127-2129

[2] Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser [J].

Huang, XD ;

Stintz, A ;

Hains, CP ;

Liu, GT ;

Cheng, J ;

Malloy, KJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (03) :227-229

[3] Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture [J].

Huffaker, DL ;

Baklenov, O ;

Graham, LA ;

Streetman, BG ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 1997, 70 (18) :2356-2358

[4] 1.3 μm room-temperature GaAs-based quantum-dot laser [J].

Huffaker, DL ;

Park, G ;

Zou, Z ;

Shchekin, OB ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 1998, 73 (18) :2564-2566

[5]

JAYARAMAN V, 1998, 11 ANN M IEEE LAS EL, P210

[6] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J].

KIRSTAEDTER, N ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BIMBERG, D ;

USTINOV, VM ;

RUVIMOV, SS ;

MAXIMOV, MV ;

KOPEV, PS ;

ALFEROV, ZI ;

RICHTER, U ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J .

ELECTRONICS LETTERS, 1994, 30 (17) :1416-1417

[7] GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes [J].

Larson, MC ;

Kondow, M ;

Kitatani, T ;

Nakahara, K ;

Tamura, K ;

Inoue, H ;

Uomi, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (02) :188-190

[8]

LEDENTSOV NN, 1994, SEMICONDUCTORS+, V28, P832

[9]

LEDENTSOV NN, 1999, SPRINGER TRACTS MODE, V156, P81

[10] Vertical cavity lasers based on vertically coupled quantum dots [J].

Lott, JA ;

Ledentsov, NN ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kop'ev, PS ;

Alferov, ZI ;

Bimberg, D .

ELECTRONICS LETTERS, 1997, 33 (13) :1150-1151