Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW

被引：29

作者：

Kageyama, T ^{[1
]}

Miyamoto, T ^{[1
]}

Makino, S ^{[1
]}

Ikenaga, Y ^{[1
]}

Nishiyama, N ^{[1
]}

Matsutani, A ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Microsyst Res Ctr, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 04期

关键词：

D O I：

10.1049/el:20010179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors present a near 1200nm wavelength vertical-cavity surface-emitting laser (VCSEL) the active region of which is Termed by GaInNAs/GaAs quantum wells grown by chemical beam epitaxy. Room temperature continuous-wave operation has been demonstrated with a high slope efficiency of 0.23W/A, a high output power of over 1.0mW, and a singlemode output power of 0.34mW. The fabricated devices with different aperture sizes show low threshold currents of 1.2-2.1mA and a record low threshold current density of 2.6kA/cm(2) in GaInNAs VCSELs.

引用

页码：225 / 226

页数：2

共 15 条

[1] Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm [J].