Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy

被引：41

作者：

Kageyama, T

Miyamoto, T

Makino, S

Koyama, F

Iga, K

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 2-3期

基金：

日本学术振兴会;

关键词：

GaNAs; GaInNAs; CBE; RF radical cell; quantum well; ion reduction;

D O I：

10.1016/S0022-0248(99)00569-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Optical quality of GaNAs and GaInNAs quantum wells and its dependence on RF radical cell operation in chemical beam epitaxy (CBE) were investigated. It was shown that nitrogen atoms are main plasma species responsible for the CBE growth of GaNAs and related alloy. By choosing aperture flow conductance, significant improvement in photoluminescence of GaInNAs/GaAs quantum well at 1.2 mu m wavelength region have been demonstrated. The reduction of ions are found to be effective to improve crystal quality. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：350 / 354

页数：5

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