GaInNAs/GaAs quantum well growth by chemical beam epitaxy

被引：33

作者：

Miyamoto, T ^{[1
]}

Takeuchi, K ^{[1
]}

Kageyama, T ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 226, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1998年 / 37卷 / 01期

关键词：

GaInNAs; chemical beam epitaxy; quantum well; N radical;

D O I：

10.1143/JJAP.37.90

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This is the first report on chemical beam epitaxy (CBE) of GaInNAs/GaAs quantum wells (QWs). From the observed clear X-ray diffraction satellite peaks, the QW structure incorporating nitrogen supplied by radical nitrogen was successfully grown. The photoluminescence emission with the emission peak wavelength of 1.0 mu m was observed from GaInNAs/GaAs QWs at room temperature. The wavelength could be elongated by increasing the amount of nitrogen and indium.

引用

收藏

页码：90 / 91

页数：2

相关论文

共 12 条

[1] Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy [J].

Ding, SA ;

Barman, SR ;

Horn, K ;

Yang, H ;

Yang, B ;

Brandt, O ;

Ploog, K .

APPLIED PHYSICS LETTERS, 1997, 70 (18) :2407-2409

[2]

IGA K, 1996, C IND PHOSPH REL MAT

[3] Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy [J].

Kondow, M ;

Uomi, K ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) :175-179

[4] GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GANXAS1-X USING A N RADICAL AS THE N-SOURCE [J].

KONDOW, M ;

UOMI, K ;

HOSOMI, K ;

MOZUME, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A) :L1056-L1058

[5] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[6]

MIYAMOTO T, 1997, OSA TECH DIG SER, V9, P126

[7] Continuous-wave operation of long-wavelength GaInNAs/GaAs quantum well laser [J].

Nakahara, K ;

Kondow, K ;

Kitatani, T ;

Yazawa, Y ;

Uomi, K .

ELECTRONICS LETTERS, 1996, 32 (17) :1585-1586

[8] Growth of single phase GaAs1-xNx with high nitrogen concentration by metal-organic molecular beam epitaxy [J].

Qiu, Y ;

Nikishin, SA ;

Temkin, H ;

Faleev, NN ;

Kudriavtsev, YA .

APPLIED PHYSICS LETTERS, 1997, 70 (24) :3242-3244

[9] BAND-GAP ENERGY AND BAND LINEUP OF III-V-ALLOY SEMICONDUCTORS INCORPORATING NITROGEN AND BORON [J].

SAKAI, S ;

UETA, Y ;

TERAUCHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (10) :4413-4417

[10] Room-temperature operation of GaInNAs/GaInP double-heterostructure laser diodes grown by metalorganic chemical vapor deposition [J].

Sato, SI ;

Osawa, Y ;

Saitoh, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A) :2671-2675