Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property

被引:40
作者
Miyamoto, T
Takeuchi, K
Kageyama, T
Koyama, F
Iga, K
机构
[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
基金
日本学术振兴会;
关键词
GaInNAs; CBE; quantum well; absorption spectrum; miscibility gap; band offset;
D O I
10.1016/S0022-0248(98)00941-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We examined quantum wells (QW) consisting of GaInNAs/GaAs grown by chemical beam epitaxy (CBE) using a radical nitrogen source, and the optical property of grown QWs was investigated by measuring of optical absorption spectra. It was found that the nitrogen composition was controlled linearly by the nitrogen flow and was increased by decreasing the growth rate. The nitrogen composition of GaInNAs was almost similar to GaNAs. The crystal quality was good for samples with the nitrogen composition of less than 0.02 and an indium content of 0.26. However, samples with larger nitrogen compositions showed degraded X-ray patterns and the reason is considered due to its miscibility gap. Step-like optical absorption spectra were observed and the absorption edge wavelength was elongated by increasing either nitrogen composition or well width. The conduction band offset energy of about 0.3-0.4 eV was estimated from the well width dependence of the absorption edge. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:67 / 72
页数:6
相关论文
共 21 条
[1]   Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy [J].
Ding, SA ;
Barman, SR ;
Horn, K ;
Yang, H ;
Yang, B ;
Brandt, O ;
Ploog, K .
APPLIED PHYSICS LETTERS, 1997, 70 (18) :2407-2409
[2]  
IGA K, 1996, C INDIUM PHOSPHIDE R
[3]   Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy [J].
Kondow, M ;
Uomi, K ;
Kitatani, T ;
Watahiki, S ;
Yazawa, Y .
JOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) :175-179
[4]   GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].
Kondow, M ;
Uomi, K ;
Niwa, A ;
Kitatani, T ;
Watahiki, S ;
Yazawa, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275
[5]   GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes [J].
Larson, MC ;
Kondow, M ;
Kitatani, T ;
Nakahara, K ;
Tamura, K ;
Inoue, H ;
Uomi, K .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (02) :188-190
[6]   GaInNAs/GaAs quantum well growth by chemical beam epitaxy [J].
Miyamoto, T ;
Takeuchi, K ;
Kageyama, T ;
Koyama, F ;
Iga, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (01) :90-91
[7]  
MIYAMOTO T, 1997, OSA TECH DIG SER, V9, P126
[8]   Continuous-wave operation of long-wavelength GaInNAs/GaAs quantum well laser [J].
Nakahara, K ;
Kondow, K ;
Kitatani, T ;
Yazawa, Y ;
Uomi, K .
ELECTRONICS LETTERS, 1996, 32 (17) :1585-1586
[9]   1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers [J].
Nakahara, K ;
Kondow, M ;
Kitatani, T ;
Larson, MC ;
Uomi, K .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (04) :487-488
[10]   ELECTRONIC-STRUCTURE AND PHASE-STABILITY OF GAAS1-XNX ALLOYS [J].
NEUGEBAUER, J ;
VAN DE WALLE, CG .
PHYSICAL REVIEW B, 1995, 51 (16) :10568-10571