Thermal annealing of GaInNAs/GaAs quantum wells grown by chemical beam epitaxy and its effect on photoluminescence

被引：93

作者：

Kageyama, T ^{[1
]}

Miyamoto, T ^{[1
]}

Makino, S ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 3B期

关键词：

GaInNAs/GaAs; quantum well; CBE; annealing effect; interdiffusion;

D O I：

10.1143/JJAP.38.L298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal annealing effect on the photoluminescence (PL) characteristics of GaInNAs/GaAs quantum wells (QWs) grown by chemical beam epitaxy (CBE) using radical nitrogen is presented. The room-temperature PL peak intensity of GaInNAs/GaAs QWs increased about 70 times and the linewidth of Pt spectra decreased after annealing at 675 degrees C for 30 seconds. The blue shift of the PL peak wavelength ofGaInNAslGaAs QWs and GaNAs/GaAs QWs, due to the structural change of QWs was observed. It was found that the blue shift was caused by In-Ga interdiffusion rather than nitrogen atom diffusion. The interdiffusion caused by defects is thought to reduce the number cif non radiative centers, resulting in the improvement of PL characteristics. The optimum annealing temperature depends on the composition.

引用

页码：L298 / L300

页数：3

共 18 条

[1] Graded InxGa1-xAs/GaAs 1.3 μm wavelength light emitting diode structures grown with molecular beam epitaxy [J].