A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers

被引：79

作者：

Miyamoto, T

Takeuchi, K

Koyama, F

Iga, K

机构：

[1] Prec. and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama 226

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 11期

基金：

日本学术振兴会;

关键词：

GaInNAs; quantum webs; semiconductor lasers; semiconductor superlattices;

D O I：

10.1109/68.634704

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a novel quantum-well (QW) structure for GaInNAs-GaAs lasers that can emit 1.3 mu m or longer wavelength light, The idea is insertion of lattice-matched GaInNA's intermediate layers between wed and barrier, which is effective for elongating the emission wavelength and reducing web thickness. It is shown that 1.3-mu m emission is achievable by using the proposed GaInNAs-GaAs QW with a web thickness thinner than that of conventional rectangular GaInNA's QW's, This structure will relax the design limitation of strained GaInNA's layers.

引用

页码：1448 / 1450

页数：3

共 17 条

[1]

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