High-temperature operation up to 170 °C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy

被引：68

作者：

Kageyama, T ^{[1
]}

Miyamoto, T

Makino, S

Nishiyama, N

Koyama, F

Iga, K

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 01期

基金：

日本学术振兴会;

关键词：

characteristic temperature; chemical beam epitaxy; GaInNAs; high temperature; quantum-well laser; semiconductor laser;

D O I：

10.1109/68.817430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-temperature pulsed operation of GaInNAs-GaAs double-quantum-well lasers grown by chemical beam epitaxy has been demonstrated for the first time. The lasing wavelength was from 1.20 to 1.27 mu m with different composition at room temperature. The highest lasing operation temperature up to 170 degrees C and a high characteristic temperature of 270 K were obtained for 300-mu m-long lasers at 1.2 mu m.

引用

收藏

页码：10 / 12

页数：3

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