High-temperature operation up to 170 °C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy

被引:68
作者
Kageyama, T [1 ]
Miyamoto, T
Makino, S
Nishiyama, N
Koyama, F
Iga, K
机构
[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Midori Ku, Yokohama, Kanagawa 2268503, Japan
基金
日本学术振兴会;
关键词
characteristic temperature; chemical beam epitaxy; GaInNAs; high temperature; quantum-well laser; semiconductor laser;
D O I
10.1109/68.817430
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-temperature pulsed operation of GaInNAs-GaAs double-quantum-well lasers grown by chemical beam epitaxy has been demonstrated for the first time. The lasing wavelength was from 1.20 to 1.27 mu m with different composition at room temperature. The highest lasing operation temperature up to 170 degrees C and a high characteristic temperature of 270 K were obtained for 300-mu m-long lasers at 1.2 mu m.
引用
收藏
页码:10 / 12
页数:3
相关论文
共 16 条
[1]   High-performance long-wavelength (λ ∼ 1.3 μm) InGaAsPN quantum-well lasers [J].
Gokhale, MR ;
Wei, J ;
Studenkov, PV ;
Wang, H ;
Forrest, SR .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (08) :952-954
[2]   Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 μm [J].
Höhnsdorf, F ;
Koch, J ;
Leu, S ;
Stolz, W ;
Borchert, B ;
Druminski, M .
ELECTRONICS LETTERS, 1999, 35 (07) :571-572
[3]  
IGA K, 1996, IND PHOSPH REL MAT A
[4]  
KAGEYAMA T, 1999, 7 INT C CHEM BEAM EP
[5]   GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].
Kondow, M ;
Uomi, K ;
Niwa, A ;
Kitatani, T ;
Watahiki, S ;
Yazawa, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275
[6]   1.2μm highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink [J].
Koyama, F ;
Schlenker, D ;
Miyamoto, T ;
Chen, Z ;
Matsutani, A ;
Sakaguchi, T ;
Iga, K .
ELECTRONICS LETTERS, 1999, 35 (13) :1079-1081
[7]   Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property [J].
Miyamoto, T ;
Takeuchi, K ;
Kageyama, T ;
Koyama, F ;
Iga, K .
JOURNAL OF CRYSTAL GROWTH, 1999, 197 (1-2) :67-72
[8]   GaInNAs/GaAs quantum well growth by chemical beam epitaxy [J].
Miyamoto, T ;
Takeuchi, K ;
Kageyama, T ;
Koyama, F ;
Iga, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (01) :90-91
[9]  
MIYAMOTO T, 1997, QUANTUM OPT, V9, P126
[10]   1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers [J].
Nakahara, K ;
Kondow, M ;
Kitatani, T ;
Larson, MC ;
Uomi, K .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (04) :487-488