High-performance long-wavelength (λ ∼ 1.3 μm) InGaAsPN quantum-well lasers

We demonstrate high-performance InGaAsPN quantum well based long-wavelength lasers grown on GaAs substrates, Nitrogen containing lasers emitting in the lambda = 1.2- to 1.3-mu m wavelength range were grown by gas source molecular beam epitaxy using a RF plasma nitrogen source. Under pulsed excitation, lasers emitting at lambda = 1.295 mu m exhibited a record low threshold current density (J(TH)) of 2.5 kA/cm(2). Lasers grown with less nitrogen in the quantum well exhibited significantly lower threshold current densities of J(TH) = 1.9 kA/cm(2) at lambda = 1.27 mu m and J(TH) = 1.27 kA/cm(2) at lambda = 1.2 mu m. We also report a slope efficiency of 0.4 W/A and an output power of 450 mW under pulsed operation for nitrogen containing lasers emitting at 1.2 mu m.