Photopumped lasing at 1.25 mu m of GaInNAs-GaAs multiple-quantum-well vertical-cavity surface-emitting lasers

被引：37

作者：

Larson, MC

Kondow, M

Kitatani, T

Tamura, K

Yazawa, Y

Okai, M

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kukubunji-shi

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 12期

关键词：

long wavelength; optical communications; semiconductor lasers; vertical-cavity surface-emitting lasers (VCSEL's);

D O I：

10.1109/68.643256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report room-temperature (RT) continuous-wave (CW) photopumped operation of long-wavelength vertical-cavity surface-emitting lasers (VCSEL's) employing a Ga0.7In0.3N0.007As0.933-GaAs multiple-quantum-well (MQW) active layer grown directly on a GaAs-AlAs distributed Bragg reflector (DBR). Evidence for laser oscillation includes spectral linewidth narrowing, clamping of spontaneous emission, and a distinct increase in slope efficiency at threshold. By taking advantage of lateral growth rate nonuniformity, we obtained laser emission over an extremely broad 110-nm wavelength range, from 1.146-1.256 mu m. Equivalent threshold current density over this range was estimated at 3.3-10 kA/cm(2).

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页码：1549 / 1551

页数：3

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