Submilliamp long wavelength vertical cavity lasers

被引：71

作者：

Margalit, NM

Babic, DI

Streubel, K

Mirin, RP

Naone, RL

Bowers, JE

Hu, EL

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA

[2] ROYAL INST TECHNOL,S-10044 STOCKHOLM,SWEDEN

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 18期

关键词：

vertical cavity surface emitting lasers;

D O I：

10.1049/el:19961099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors demonstrate a low threshold laterally oxidised long wavelength (1.55 mu m) vertical cavity laser. The devices exhibit the first submilliamp threshold current (0.8 mA) as well as the highest reported operating temperatures (64 degrees C CW and 95 degrees C pulsed) of any long wavelength vertical cavity laser.

引用

页码：1675 / 1677

页数：3

共 6 条

[1] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF 1.54-MU-UM VERTICAL-CAVITY LASERS [J].