ROOM-TEMPERATURE PHOTOPUMPED 1.5 MU-M QUANTUM-WELL SURFACE EMITTING LASERS WITH INGAASP/INP DISTRIBUTED BRAGG REFLECTORS

被引：14

作者：

TAI, K

CHOA, FS

TSANG, WT

CHU, SNG

WYNN, JD

SERGENT, AM

机构：

[1] AT&T Bell Laboratories

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 17期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19910967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature surface emitting lasing near 1.5-mu-m wave-length was observed via photopumping in vertical cavity structures with epitaxially grown InGaAsP/InP distributed Bragg reflectors. The use of only six 40 angstrom strained InGaAs quantum wells as gain medium indicated that high reflectivity was achieved in the Bragg reflectors and low threshold current operation would be possible for electric injection with proper current confinement schemes.

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页码：1540 / 1542

页数：3

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