CHEMICAL BEAM EPITAXIALLY GROWN INP/INGAASP INTERFERENCE MIRROR FOR USE NEAR 1.55 MU-M WAVELENGTH

被引：37

作者：

TAI, K ^{[1
]}

MCCALL, SL ^{[1
]}

CHU, SNG ^{[1
]}

TSANG, WT ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.98825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：826 / 827

页数：2

共 8 条

[1] MULTIPLE QUANTUM-WELL REFLECTION MODULATOR [J].

BOYD, GD ;

MILLER, DAB ;

CHEMLA, DS ;

MCCALL, SL ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1119-1121

[2]

MCCALL SL, 1986, C LASERS ELECTROOPTI

[3] MODE-LOCKING BY SYNCHRONOUS PUMPING USING A GAIN MEDIUM WITH MICROSECOND DECAY TIMES [J].

MOLLENAUER, LF ;

VIEIRA, ND ;

SZETO, L .

OPTICS LETTERS, 1982, 7 (09) :414-416

[4]

SUEMATSU Y, 1982, GAINASP ALLOY SEMICO, P362

[5] 1.55-MU-M OPTICAL LOGIC ETALON WITH PICOJOULE SWITCHING ENERGY MADE OF INGAAS/INP MULTIPLE QUANTUM-WELLS [J].

TAI, K ;

JEWELL, JL ;

TSANG, WT ;

TEMKIN, H ;

PANISH, M ;

TWU, Y .

APPLIED PHYSICS LETTERS, 1987, 50 (13) :795-797

[6] HIGH REFLECTIVITY GAAS-ALGAAS MIRRORS FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

THORNTON, RL ;

BURNHAM, RD ;

STREIFER, W .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1028-1030

[7] CHEMICAL BEAM EPITAXY OF INP AND GAAS [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1234-1236

[8] MULTILAYER GAAS-AL0.3GA0.7AS DIELECTRIC QUARTER WAVE STACKS GROWN BY MOLECULAR-BEAM EPITAXY [J].

VANDERZIEL, JP ;

ILEGEMS, M .

APPLIED OPTICS, 1975, 14 (11) :2627-2630

← 1 →