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HIGH REFLECTIVITY GAAS-ALGAAS MIRRORS FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
被引:47
作者
:
THORNTON, RL
论文数:
0
引用数:
0
h-index:
0
THORNTON, RL
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
STREIFER, W
论文数:
0
引用数:
0
h-index:
0
STREIFER, W
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1984年
/ 45卷
/ 10期
关键词
:
D O I
:
10.1063/1.95051
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1028 / 1030
页数:3
相关论文
共 8 条
[1]
BORN M, 1975, PRINCIPLES OPTICS, P66
[2]
MONOLAYER HETEROINTERFACES AND THIN-LAYERS (APPROXIMATELY-10 A) IN ALXGA1-XAS-GAAS SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BROWN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
BROWN, JM
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HOLONYAK, N
LUDOWISE, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
LUDOWISE, MJ
DIETZE, WT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
DIETZE, WT
LEWIS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
LEWIS, CR
[J].
ELECTRONICS LETTERS,
1984,
20
(05)
: 204
-
205
[3]
BURNHAM RD, 1982, Patent No. 4309670
[4]
IMPROVED 2-WAVELENGTH DEMULTIPLEXING INGAASP PHOTODETECTOR
CAMPBELL, JC
论文数:
0
引用数:
0
h-index:
0
CAMPBELL, JC
DENTAI, AG
论文数:
0
引用数:
0
h-index:
0
DENTAI, AG
LEE, TP
论文数:
0
引用数:
0
h-index:
0
LEE, TP
BURRUS, CA
论文数:
0
引用数:
0
h-index:
0
BURRUS, CA
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1980,
16
(06)
: 601
-
603
[5]
CAMRAS MD, 1982, APPL PHYS LETT, V41
[6]
ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
DAPKUS, PD
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(07)
: 466
-
468
[7]
SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES
MANASEVIT, HM
论文数:
0
引用数:
0
h-index:
0
MANASEVIT, HM
[J].
APPLIED PHYSICS LETTERS,
1968,
12
(04)
: 156
-
+
[8]
SZE SM, 1981, PHYSICS SEMICONDUCTO, P715
←
1
→
共 8 条
[1]
BORN M, 1975, PRINCIPLES OPTICS, P66
[2]
MONOLAYER HETEROINTERFACES AND THIN-LAYERS (APPROXIMATELY-10 A) IN ALXGA1-XAS-GAAS SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BROWN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
BROWN, JM
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HOLONYAK, N
LUDOWISE, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
LUDOWISE, MJ
DIETZE, WT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
DIETZE, WT
LEWIS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
LEWIS, CR
[J].
ELECTRONICS LETTERS,
1984,
20
(05)
: 204
-
205
[3]
BURNHAM RD, 1982, Patent No. 4309670
[4]
IMPROVED 2-WAVELENGTH DEMULTIPLEXING INGAASP PHOTODETECTOR
CAMPBELL, JC
论文数:
0
引用数:
0
h-index:
0
CAMPBELL, JC
DENTAI, AG
论文数:
0
引用数:
0
h-index:
0
DENTAI, AG
LEE, TP
论文数:
0
引用数:
0
h-index:
0
LEE, TP
BURRUS, CA
论文数:
0
引用数:
0
h-index:
0
BURRUS, CA
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1980,
16
(06)
: 601
-
603
[5]
CAMRAS MD, 1982, APPL PHYS LETT, V41
[6]
ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
DAPKUS, PD
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(07)
: 466
-
468
[7]
SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES
MANASEVIT, HM
论文数:
0
引用数:
0
h-index:
0
MANASEVIT, HM
[J].
APPLIED PHYSICS LETTERS,
1968,
12
(04)
: 156
-
+
[8]
SZE SM, 1981, PHYSICS SEMICONDUCTO, P715
←
1
→