HIGH-REFLECTIVITY ALAS0.52SB0.48/GAINAS(P) DISTRIBUTED BRAGG MIRROR ON INP SUBSTRATE FOR 1.3-1.55-MU-M WAVELENGTHS

被引：20

作者：

TAI, K ^{[1
]}

FISCHER, RJ ^{[1
]}

CHO, AY ^{[1
]}

HUANG, KF ^{[1
]}

机构：

[1] CHIAO TUNG UNIV,HSINCHU,TAIWAN

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 17期

关键词：

D O I：

10.1049/el:19890778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1159 / 1160

页数：2

共 9 条

[1] GAINASP-INP SURFACE EMITTING LASER (LAMBDA = 1.4 MU-M, 77-K) WITH HETEROMULTILAYER BRAGG REFLECTOR [J].

CHAILERTVANITKUL, A ;

IGA, K ;

MORIKI, K .

ELECTRONICS LETTERS, 1985, 21 (07) :303-304

[2]

FISCHER RJ, IN PRESS APPL PHYS L

[3]

GOURLEY PL, 1987, P SPIE BAY POINT, P178

[4]

Iga K., 1984, FUNDAMENTALS MICROOP

[5] GAAS SURFACE EMITTING LASERS WITH CIRCULAR BURIED HETEROSTRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION AND TWO-DIMENSIONAL LASER ARRAY [J].

KOYAMA, F ;

TOMOMATSU, K ;

IGA, K .

APPLIED PHYSICS LETTERS, 1988, 52 (07) :528-529

[6] VERTICAL CAVITY SURFACE-EMITTING LASER WITH AN AIGAAS/AIAS BRAGG REFLECTOR [J].

SAKAGUCHI, T ;

KOYAMA, F ;

IGA, K .

ELECTRONICS LETTERS, 1988, 24 (15) :928-929

[7]

SUEMATSU Y, 1982, GAINASP ALLOY SEMICO

[8] CHEMICAL BEAM EPITAXIALLY GROWN INP/INGAASP INTERFERENCE MIRROR FOR USE NEAR 1.55 MU-M WAVELENGTH [J].

TAI, K ;

MCCALL, SL ;

CHU, SNG ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1987, 51 (11) :826-827

[9]

ZINKIEWICZ LM, 1989, APPL PHYS LETT, V20, P1959

← 1 →