VERTICAL CAVITY SURFACE-EMITTING LASER WITH AN AIGAAS/AIAS BRAGG REFLECTOR

被引:53
作者
SAKAGUCHI, T
KOYAMA, F
IGA, K
机构
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D O I
10.1049/el:19880632
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:928 / 929
页数:2
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[1]   GAINASP-INP SURFACE EMITTING LASER (LAMBDA = 1.4 MU-M, 77-K) WITH HETEROMULTILAYER BRAGG REFLECTOR [J].
CHAILERTVANITKUL, A ;
IGA, K ;
MORIKI, K .
ELECTRONICS LETTERS, 1985, 21 (07) :303-304
[2]   ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS/GAAS SURFACE EMITTING JUNCTION LASER [J].
IGA, K ;
ISHIKAWA, S ;
OHKOUCHI, S ;
NISHIMURA, T .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :663-668
[3]   MICROCAVITY GAALAS/GAAS SURFACE-EMITTING LASER WITH ITH=6MA [J].
IGA, K ;
KINOSHITA, S ;
KOYAMA, F .
ELECTRONICS LETTERS, 1987, 23 (03) :134-136
[4]   1.5-1.6-MU-M GALNASP/INP DYNAMIC-SINGLE-MODE (DSM) LASERS WITH DISTRIBUTED BRAGG REFLECTOR [J].
KOYAMA, F ;
SUEMATSU, Y ;
ARAI, S ;
TAWEE, TE .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :1042-1051
[5]   SURFACE-EMITTING LASER DIODE WITH VERTICAL GAAS GAALAS QUARTER-WAVELENGTH MULTILAYERS AND LATERAL BURIED HETEROSTRUCTURE [J].
OGURA, M ;
HSIN, W ;
WU, MC ;
WANG, S ;
WHINNERY, JR ;
WANG, SC ;
YANG, JJ .
APPLIED PHYSICS LETTERS, 1987, 51 (21) :1655-1657
[6]   GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J].
SODA, H ;
IGA, K ;
KITAHARA, C ;
SUEMATSU, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) :2329-2330